The European Commission has approved funding under the European Chips Act for Infineon's Smart Power Fab in Dresden, bringing ...

SemiQ Inc, a developer of SiC devices, has announced a family of three 1200V SiC full-bridge modules, each integrating two of ...

A research team at the Korea Electrotechnology Research Institute (KERI) has developed technology to evaluate radiation ...

GaN suppliers have taken various approaches to packaging, leading to a lack of multiple footprint-compatible sources for ...

Cambridge GaN Devices (CGD) has closed a $32 million Series C funding round. The investment was led by a strategic investor ...

The new production capability in Belgium is in addition to existing CMP slurry production sites in Arizona, USA, Hsinchu and ...

Frontgrade Technologies, a US provider of electronics for aerospace and defence, has qualified to Class L standards its ...

The TSC family has been designed to help customers achieve excellent robustness with maximum power density and system ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy ...

GaN specialist Efficient Power Conversion Corporation (EPC) has announced the release of the 4th edition of its textbook, GaN ...

The diodes offer a single line ESD protection solution with up to 18 kV, according to IEC 61000-4-2, and up to 15 kV with ...